𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - Full isolation technology by porous oxidized silicon and its application to LSIs

✍ Scribed by Imai, K.; Nakajima, S.

Book ID: 126722365
Publisher: IRE
Year: 1981
Weight: 578 KB
Category: Article
DOI: 10.1109/IEDM.1981.190092

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IRE 1981 International Electron Devices

[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology

✍ Wang, K.L.; Holloway, T.C.; Pinizzotto, R.F.; Sobczak, Z.P.; Hunter, W.R.; Tasch 📂 Article 📅 1981 🏛 IRE ⚖ 380 KB

[IRE 1973 International Electron Devices

[IRE 1973 International Electron Devices Meeting - ()] 1973 International Electron Devices Meeting - A buried metallization and its application to a multilayer system

✍ Takagi, M.; Terada, C.; Nakayama, K. 📂 Article 📅 1973 🏛 IRE ⚖ 222 KB

[IRE 1961 International Electron Devices

[IRE 1961 International Electron Devices Meeting - ()] 1961 International Electron Devices Meeting - Design and application of silicon unipolar transistors made by diffusion techniques

✍ Bosenberg, W.A.; Olmstead, J.A.; Wybrands, K. 📂 Article 📅 1961 🏛 IRE ⚖ 52 KB

[IRE 1982 International Electron Devices

[IRE 1982 International Electron Devices Meeting - ()] 1982 International Electron Devices Meeting - The SWAMI - A defect free and near-zero bird's-beak local oxidation process and its application in VLSI technology

✍ Chiu, K.Y.; Fang, R.; Lin, J.; Moll, J.L.; Lage, C.; Angelos, S.; Tillman, R. 📂 Article 📅 1982 🏛 IRE ⚖ 419 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - A high aspect-ratio silicon substrate-via technology and applications: through-wafer interconnects for power and ground and Faraday cages for SOC isolation

✍ Wu, J.H.; Del Alamo, J.A.; Jenkins, K.A. 📂 Article 📅 2000 🏛 IEEE ⚖ 540 KB