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[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - A high aspect-ratio silicon substrate-via technology and applications: through-wafer interconnects for power and ground and Faraday cages for SOC isolation

✍ Scribed by Wu, J.H.; Del Alamo, J.A.; Jenkins, K.A.

Book ID: 124156998
Publisher: IEEE
Year: 2000
Weight: 540 KB
Edition: 2000
Category: Article
ISBN-13: 9780780364387
DOI: 10.1109/IEDM.2000.904359

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