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[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology

✍ Scribed by Wang, K.L.; Holloway, T.C.; Pinizzotto, R.F.; Sobczak, Z.P.; Hunter, W.R.; Tasch, A.F.

No coin nor oath required. For personal study only.

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