Ion yields of impurities in gallium arsenide for secondary ion mass spectrometry
โ Scribed by Homma, Yoshikazu.; Tanaka, Tohru.
- Book ID
- 127394320
- Publisher
- American Chemical Society
- Year
- 1986
- Tongue
- English
- Weight
- 664 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0003-2700
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Round-robin studies on relative sensitivity factors (RSFs) in secondary ion mass spectrometry (SIMS) were conducted using bulk GaAs samples uniformly doped with various impurity elements. A total of 31 laboratories participated in two round-robins. More than 30 sets of relative ion intensities were
The purpose of our work is to develop Secondary Ion Mass Spectrometry for routine trace element analysis; this paper demonstrates one of several applications of this method in monitoring the liquid gallium chemical regeneration process. Two groups of gallium samples with similar concentrations of im