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Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

✍ Scribed by . Haijiang Yu; L. Mccarthy; S. Rajan; S. Keller; S. Denbaars; J. Speck; U. Mishra


Book ID
126500983
Publisher
IEEE
Year
2005
Tongue
English
Weight
329 KB
Volume
26
Category
Article
ISSN
0741-3106

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Nonalloyed ohmic contact of AlGaN/GaN HE
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## Abstract Selective area growth (SAG) based on plasma assisted molecular beam epitaxy (PAMBE) was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic metals. An AlGaN/GaN high‐electron mobility transistor (HEMT) using SAG by PAMBE with nonalloyed ohmic metals and r