Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

✍ Scribed by Recht, F.; McCarthy, L.; Rajan, S.; Chakraborty, A.; Poblenz, C.; Corrion, A.; Speck, J.S.; Mishra, U.K.

• Book ID: 111675836
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 155 KB
• Volume: 27
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2006.870419