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Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

✍ Scribed by Pei, Y.; Recht, F.; Fichtenbaum, N.; Keller, S.; DenBaars, S.P.; Mishra, U.K.


Book ID
115524635
Publisher
The Institution of Electrical Engineers
Year
2007
Tongue
English
Weight
84 KB
Volume
43
Category
Article
ISSN
0013-5194

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