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Ion implantation and diffusion of Al in a SiO2Si system

✍ Scribed by A. La Ferla; G. Galvagno; S. Rinaudo; V. Raineri; G. Franco; M. Camalleri; A. Gasparotto; A. Carnera; E. Rimini

Book ID
113287780
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
432 KB
Volume
116
Category
Article
ISSN
0168-583X

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## Abstract A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO~2~/p‐Si heterostructure containing a thin oxide layer of __d__= 20 nm thickness and implanted by Si^+^ ions. With an implantation energy of 12 keV the maximum density of the implanted S