Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backsca
β¦ LIBER β¦
Ion energy dependence of interface parameters of ion beam sputter deposited W/Si interfaces
β Scribed by A. Biswas; D. Bhattacharyya
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 425 KB
- Volume
- 268
- Category
- Article
- ISSN
- 0168-583X
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