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Ion dose and anneal temperature dependent studies of silicon implanted AlxGa1−xN

✍ Scribed by E.A. Moore; Y.K. Yeo; Mee-Yi Ryu

Book ID
113514102
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
858 KB
Volume
12
Category
Article
ISSN
1567-1739

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Electrical characterization of Si-ion im
Electrical characterization of Si-ion implanted AlxGa1-xN annealed at lower temperatures
✍ Ryu, Mee-Yi ;Yeo, Y. K. ;Zens, T. W. ;Marciniak, M. A. ;Hengehold, R. L. ;Steine 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 140 KB

## Abstract Electrical activation studies of Si‐implanted Al~__x__~ Ga~1–__x__~ N (__x__ = 0.1 and 0.18) grown on sapphire substrate have been made as a function of anneal time, anneal temperature, and ion dose. Silicon implantation was done at room temperature with a dose ranging from 5 × 10^13^ t