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Ion beam synthesis of gallium nitride

✍ Scribed by P.J Kench; J.M Shannon; G Shao; P Tsakiropoulos; S.R.P Silva


Book ID
114164661
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
194 KB
Volume
175-177
Category
Article
ISSN
0168-583X

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## Abstract A gallium nitride bilayer was deposited on Al~2~O~3~(0001) by low‐energy nitrogen ion beam assisted molecular beam epitaxy using two different ion energies. First, the ion energy was chosen such that a thin film consisting of a mixture of wurtzitic and zincblende polytypes of GaN could