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Bond formation in ion beam synthesised amorphous gallium nitride

✍ Scribed by S.A. Almeida; S.R.P. Silva; B.J. Sealy; J.F. Watts

Book ID: 114086744
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 394 KB
Volume: 343-344
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(98)01696-4

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 × 10^17^ ions/cm^2^ at ion in