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Ion beam synthesis and characterization of yttrium silicide in Si(111)

✍ Scribed by R. Ayache; A. Bouabellou; F. Eichhorn; E. Richter; A. Mücklich

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
680 KB
Volume
27
Category
Article
ISSN
0928-4931

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Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter