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Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into silicon

โœ Scribed by Dihu Chen; W.Y Cheung; S.P Wong

Book ID
114170620
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
175 KB
Volume
148
Category
Article
ISSN
0168-583X

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SiC layers were formed by implantation of C + into silicon at 35 keV to fluence of 1 โ€ข 10 18 cm ร€2 . Thermal annealing was performed at 900 ยฐC for various time intervals from 1 h to 8 h, and at various temperatures from 700 ยฐC to 1200 ยฐC for 2 h in nitrogen ambient. The phase transformation characte