Ion beam defect engineering in semiconductors and optoelectric materials

[Engineering Materials and Processes] Ch

[Engineering Materials and Processes] Charged Semiconductor Defects || Trends in Charged Defect Behavior

✍ , 📂 Article 📅 2009 🏛 Springer London 🌐 English ⚖ 275 KB

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena

Ion beam characterization and engineerin

Ion beam characterization and engineering of strain in semiconductor multi-layers

✍ S.V.S Nageswara Rao; Anand P Pathak; Azher M Siddiqui; D.K Avasthi; Claudiu Munt 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 486 KB

Focused ion beam preparation of inclined

Focused ion beam preparation of inclined planes in semiconductor materials

✍ B Khamsehpour; ST Davies 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 496 KB

[Engineering Materials and Processes] Ch

[Engineering Materials and Processes] Charged Semiconductor Defects || Experimental and Computational Characterization

✍ , 📂 Article 📅 2009 🏛 Springer London 🌐 English ⚖ 387 KB

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena

Defects and material processing in compo

Defects and material processing in compound semiconductors

✍ Kazumi Wada 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 527 KB

[Engineering Materials] Transport in Met

[Engineering Materials] Transport in Metal-Oxide-Semiconductor Structures || The MOS Oxide and Its Defects

✍ Bentarzi, Hamid 📂 Article 📅 2011 🏛 Springer Berlin Heidelberg ⚖ 289 KB