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Defects and material processing in compound semiconductors

✍ Scribed by Kazumi Wada

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 527 KB
Volume: 85
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(94)00338-6

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## Abstract A new class of defects characterized by inherent non‐exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc