Frozen-in native defects in semiconductor compounds
β Scribed by K.I. Hagemark
- Publisher
- Elsevier Science
- Year
- 1975
- Tongue
- English
- Weight
- 61 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0038-1098
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## Abstract A new class of defects characterized by inherent nonβexponential capture and emission processes was observed. A theory β based on the potential barrier model β is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to disloc
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