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Investigations of MOCVD-grown AlInAs-InP type II heterostructures

✍ Scribed by Lugagne-Delpon, E; Voisin, P; Vieren, J P; Voos, M; Andre, J P; Patillon, J N


Book ID
125806161
Publisher
Institute of Physics
Year
1992
Tongue
English
Weight
337 KB
Volume
7
Category
Article
ISSN
0268-1242

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We report on the microwa¨e performance and reliability e¨aluation of AlInAsrGaInAsrInP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers pro¨ide high threshold ¨oltage uniformity, and less thermal and bias stress degradation compared to con¨ent