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Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy

✍ Scribed by Yasuyuki Kobayashi; V Perez-Solorzano; J Off; B Kuhn; H Gräbeldinger; Heinz Schweizer; Ferdinand Scholz

Book ID
108341670
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
142 KB
Volume
243
Category
Article
ISSN
0022-0248

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Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl