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Investigations of GaAs layers deposited from GaAsBi solution

✍ Scribed by M. Panek; M. Ratuszek; Dr. M. Tlaczala

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
295 KB
Volume
20
Category
Article
ISSN
0232-1300

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✦ Synopsis

Investigations of GaAs Layers Deposited from GSAs-Bi Solution

The growth kinetics of LPE GaAs layers dvposited from Ga-As mid Ga-As-Bi solutions mid the results of thc optical investigations of the layers arc presented. It is shown that addition of two atomic per cent of Hi to the Gu-Assolution increase about 3 times t h e growth rate of GaAs layers without any dcterieration of their electrical parameters such as the carrier coricentratioii arid mobility arid the total conductivity of the layers. Also, the iiitruductiori of Hi improves "wiping off" t,hc solution from the substrat>c, which strict domarids of dirneiisiori tolerances of a LI'X boat. Optical mcasurcmeiits at T = 300 K rcvealed that Hi does not alter t h e energy gap value of the GaAs epitaxial layers. Trailsmission spectroscopy and 'photoluminescence spectra did not desclose any Hi dopant level in the GaAs lattice. Instead, the latter measurements revealed presence of dopant level associated most probably with Si atoms and SiAs complexes in the GaAs layers.

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