Investigation of the MBE growth of GaAs/AlAs quantum wells and the effect of AlAs spikes on their luminescence

✍ Scribed by D.S. Katzer; D. Gammon; B.V. Shanabrook; B. Tadayon

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 550 KB
• Volume: 8
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(90)90268-c

✦ Synopsis

The interfacial smoothness of GaAslAlAs quantum well structures is examined using photoluminescence (PL) and reflection high-energy electron diffraction @HEED).

Transitions from what are commonly referred to as "pseudo-smooth" to "rough" to "truly-smooth" interfaces are observed by varying the growth interrupt time,. Trulysmooth GaAs on AlAs interfaces are achieved simply using growth interruption. We discuss the possible utility of using AlAs spikes in GaAs/AlAs quantum wells as a more sensitive structural probe of the heterojunction interfaces.