## Abstract In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic
Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD
โ Scribed by B. Maleyre; S. Ruffenach; O. Briot; B. Gil; A. van der Lee
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 242 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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