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Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer

✍ Scribed by R. Kinder; A. Vincze; M. Kuruc; R. Srnánek; B. Lojek; B. Sopko; D. Chren

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
159 KB
Volume
37
Category
Article
ISSN
0026-2692

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Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa