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Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence

✍ Scribed by V. A. Wilkinson; A. D. Prins; D. J. Dunstan; L. K. Howard; M. T. Emeny

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Thermal quenching of the photoluminescen

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Investigation of the photoluminescence a

✍ S. V. Gaponov; V. F. Dryakhlushin; V. L. Mironov; D. G. Revin 📂 Article 📅 1997 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 959 KB

Microscopic investigation of the strain

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Pressure dependence of the band-gap ener

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Estimation of the location of embedded I

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Effects of growth interruption on the op

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