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Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

โœ Scribed by Daniel C. Bertolet; Jung-Kuei Hsu; Kei May Lau; Emil S. Koteles

Book ID
112812696
Publisher
Springer US
Year
1991
Tongue
English
Weight
518 KB
Volume
20
Category
Article
ISSN
0361-5235

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## Son et al./Electrical properties of CBr4-doped GaAs epilayers Carbon incorporation into GaAs epilayers has been performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of CBr4-doped GaAs epilayers grown on the GaAs substrates with various s