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Pressure dependence of the band-gap energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum well

✍ Scribed by E.D. Jones; S.W. Tozer; T. Schmiedel


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
121 KB
Volume
2
Category
Article
ISSN
1386-9477

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