✦ LIBER ✦

Investigation of solution-processed amorphous SrInZnO thin film transistors

✍ Scribed by Doo Hyun Yoon; Si Joon Kim; Woong Hee Jeong; Dong Lim Kim; You Seung Rim; Hyun Jae Kim

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 648 KB
Volume: 326
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.090

No coin nor oath required. For personal study only.

✦ Synopsis

In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solutionprocessed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 1C, the TFT showed increased performance. At optimized conditions (20 at%, 500 1C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm 2 /Vs, an on/off ratio of 4.54 Â 10 6 , a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.

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