Characterization of solution-processed pentacene thin film transistors

✍ Scribed by Natsume, Yutaka

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 537 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200824197

✦ Synopsis

Abstract

The electrical and chemical stability of solution‐processed pentacene thin film transistors (TFTs) was investigated using analytical models reported by Horowitz et al. in comparison with vacuum‐deposited TFTs. The estimated total trap density of the solution‐processed film was one to two order(s) of magnitude lower than that of the vacuum‐deposited film. The low trap density of the solution‐processed film is due to large crystalline domains, which include only a few structural defects, in contrast to the vacuum‐deposited film. The solution‐processed film is also superior to the vacuum‐deposited film in electrical stability during long‐term storage in air. That is, a considerable shift of the transistor characteristics in the subthreshold region including a threshold voltage was observed, especially in the case of the vacuum‐deposited TFT. The change in the electrical properties is attributed to the increase of oxidation‐induced chemical impurities, which were confirmed by surface mass spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)