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Investigation of point defects at the high-k oxides/Si(1 0 0) interface by electrically detected magnetic resonance

✍ Scribed by S. Baldovino; S. Nokhrin; G. Scarel; M. Fanciulli; T. Graf; M.S. Brandt

Book ID: 117146556
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 243 KB
Volume: 322
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(03)00277-1

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Investigation of point defects at the high-k oxides/Si(1&#xa0;0&#xa0;0) interface by electrically detected magnetic resonance

Investigation of point defects at the high-k oxides/Si(1 0 0) interface by electrically detected magnetic resonance