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Investigation of metallization schemes for high temperature devices based on silicon carbide

✍ Scribed by T. Scholz; R. Getto; K. Gottfried; G. Kurz; J. Kriz; V. Lauer

Book ID
105897288
Publisher
Springer
Year
1998
Tongue
English
Weight
636 KB
Volume
361
Category
Article
ISSN
1618-2650

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Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS ca