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Investigation of interfacial states in MIS structures by a single-frequency admittance method

✍ Scribed by E. N. Bormontov; S. V. Lukin


Book ID
110120672
Publisher
Springer
Year
1997
Tongue
English
Weight
92 KB
Volume
42
Category
Article
ISSN
1063-7842

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In this work, the investigation of the interface state density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G/oΓ€V) characteristics in In/SiO 2 /p-Si metal-insulator-semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness