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Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

✍ Scribed by A. Segura; K. Wünstel; A. Chevy


Book ID
104847694
Publisher
Springer
Year
1983
Tongue
English
Weight
646 KB
Volume
31
Category
Article
ISSN
1432-0630

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Deep level characteristics in undoped and Si-doped Ga05tIn049P layers has been investigated using photocapacitance and photoluminescence (PL) methods. Ga0.5~In049P layers were grown by metalorganic vapor-phase epitaxy in the temperature range 600-730 °C and with doping levels from 3.9 x l0 w cm -~ t