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Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures

✍ Scribed by Gwo-Mei Wu; Chen-Wen Tsai; Nie-Chuan Chen; Pen-Hsiu Chang

Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 220 KB
Volume: 42
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.200711018

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✦ Synopsis

Abstract

The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal‐organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the dislocation density. The results showed that the etch pit density could be greatly reduced by one order of magnitude. Cross‐sectional transmission electron microscopy (XTEM) study confirmed the efficiency of GaN/AlN superlattice in blocking threading dislocation propagation in GaN crystal. The design of nine period GaN/AlN (20nm/2nm) superlattice has been evidenced to be effective in reducing the dislocation density and improving the crystal quality. In addition, the dislocation bending in GaN/AlN interface and dislocation merging is investigated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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