Deep levels investigation of AlGaN/GaN h
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W. Chikhaoui; J.M. Bluet; P. Girard; G. Bremond; C. Bru-Chevallier; C. Dua; R. A
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Article
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2009
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Elsevier Science
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English
β 249 KB
In this work we investigate AlGaN/GaN HEMTs structures grown by metalorganic chemical-vapor deposition on SiC substrates. They consist of a 22 nm thick undoped AlGaN barrier with Al mole fraction x ΒΌ 0.24 on top of a 1.7 mm unintentionally doped GaN buffer layer. Structures with large gate are analy