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Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

✍ Scribed by A. Balandin; K. L. Wang; S. Cai; R. Li; C. R. Viswanathan; E. N. Wang; M. Wojtowicz


Book ID
107452420
Publisher
Springer US
Year
2000
Tongue
English
Weight
141 KB
Volume
29
Category
Article
ISSN
0361-5235

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In this work we investigate AlGaN/GaN HEMTs structures grown by metalorganic chemical-vapor deposition on SiC substrates. They consist of a 22 nm thick undoped AlGaN barrier with Al mole fraction x ΒΌ 0.24 on top of a 1.7 mm unintentionally doped GaN buffer layer. Structures with large gate are analy