DLTS study of deep level defects in Li-i
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K.V. Madhu; S.R. Kulkarni; M. Ravindra; R. Damle
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Article
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2007
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Elsevier Science
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English
โ 232 KB
Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li 3+ -ions with fluences ranging from 3.1 โข 10 13 ions cm ร2 to 12.5 โข 10 13 ions cm ร2 , is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy