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Investigation of deep level defects in copper irradiated bipolar junction transistor

โœ Scribed by K.V. Madhu; Ravi Kumar; M. Ravindra; R. Damle


Book ID
108271677
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
443 KB
Volume
52
Category
Article
ISSN
0038-1101

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Commercial npn transistor (2N 2219A) irradiated with 50 MeV Li 3+ -ions with fluences ranging from 3.1 โ€ข 10 13 ions cm ร€2 to 12.5 โ€ข 10 13 ions cm ร€2 , is studied for radiation induced gain degradation and minority carrier trap levels or recombination centers. The properties such as activation energy