✦ LIBER ✦

Investigation of Deep Defects Due to α-Particle Irradiation in n-Silicon

✍ Scribed by Indusekhar, H. ;Kumar, V. ;Sengupta, D.

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 510 KB
Volume: 93
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210930230

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Changes in properties of silicon due to

Changes in properties of silicon due to irradiation by heavy charged particles: T I Kolomenskaya and N V Kuznetsov, Struct Defects in Semicon, Coll, Novosibirsk 1973, 259–262 (in Russian)

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

DLTS study of deep level defects in Cz n

DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C

✍ Schmalz, K. ;Kirscht, F.-G. ;Tittelbach-Helmrich, K. 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 922 KB

Neutron emission in oxygen due to α-irra

Neutron emission in oxygen due to α-irradiation at energies of 5.15 and 5.49 MeV

✍ V. M. Smirnov; N. G. Triumfov; O. S. Tsvetkov; P. P. Chinenov 📂 Article 📅 1987 🏛 Springer US 🌐 English ⚖ 229 KB

Positron probing of gamma-irradiated Ge

Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

✍ N.Yu. Arutyunov; V.V. Emtsev 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 203 KB

The emission of the high-momentum annihilation radiation from the subvalent ion core shells and electron density around a positron localized at a vacancy-group-V-impurity atom complexes produced in oxygen-lean Ge doped with P, As, Sb, and Bi by irradiation with 60 Co gamma-rays at room temperature h

588. Investigation of defect formation i

588. Investigation of defect formation in silicon irradiated by ions using the method of electron paramagnetic resonance: N N Gerasimenko et al, Fiz Tekh Polup, 5 (9), 1971, 1700–1705 (in Russian)

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 146 KB