Investigation of beam effect on porous silicon
✍ Scribed by E Kótai; F Pászti; E Szilágyi
- Book ID
- 114171881
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 152 KB
- Volume
- 161-163
- Category
- Article
- ISSN
- 0168-583X
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📜 SIMILAR VOLUMES
Ion beam analytical methods (e.g. Rutherford Backscattering, RBS, Elastic Recoil Detection, ERD, or Nuclear Reaction Analysis, NRA) are widely used for quantitative determination of the depth distribution of elements. In porous samples however, where the diameter of the pores is a few tens of nm (i.
Porous silicon (PS) layers are formed on p+-type silicon wafers by electrochemical anodization in hydrofluoric acid solutions. Microechography and acoustic signature, V(z), have been performed at 1.5 GHz and 600 MHz, respectively, in order to study the elastic properties of PS layers. The thicknesse