The morphological di β erences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structur
β¦ LIBER β¦
Radiation effects on porous silicon
β Scribed by B. Pivac; B. Rakvin; L. Pavesi
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 276 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0022-2313
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