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Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon

✍ Scribed by G. Lamedica; M. Balucani; V. Bondarenko; L. Franchina; L. Dolgyi; V. Yakovtseva; A. Ferrari

Book ID
110277409
Publisher
Springer
Year
2000
Tongue
English
Weight
306 KB
Volume
7
Category
Article
ISSN
1380-2224

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The morphological di †erences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structur