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Different morphology aspects of n-type porous silicon

✍ Scribed by E.Yu. Buchin; A.B. Churilov; A.V. Prokaznikov


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
372 KB
Volume
102
Category
Article
ISSN
0169-4332

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The morphological di †erences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structur