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Investigation of 4H-SiC epitaxial layers implanted by Al ions

✍ Scribed by E. V. Kolesnikova; E. V. Kalinina; A. A. Sitnikova; M. V. Zamoryanskaya


Book ID
110203084
Publisher
Pleiades Publishing
Year
2009
Tongue
English
Weight
307 KB
Volume
3
Category
Article
ISSN
1027-4510

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## Abstract We report a full wafer size investigation of the homogeneity of electrical properties in the case of co‐implanted nitrogen and phosphorus ions in 4H–SiC semi‐insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed el