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Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes

✍ Scribed by H. Aizawa; K. Soejima; A. Hori; A. Satake; K. Fujiwara

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 558 KB
Volume: 3
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200564117

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