Internal Structure of Free Excitons in GaN

✍ Scribed by P.P. Paskov; T. Paskova; P.O. Holtz; B. Monemar

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 86 KB
• Volume: 228
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200111)228:2<467::aid-pssb467>3.0.co;2-2

✦ Synopsis

Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.