𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Polarised Magnetoluminescence of Excitons in Homoepitaxial GaN Layers

✍ Scribed by A. Wysmołek; M. Potemski; R. Stepniewski; J. Lusakowski; K. Pakuła; J.M. Baranowski; G. Martinez; P. Wyder; I. Grzegory; S. Porowski


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
165 KB
Volume
216
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Excitonic Transitions in Homoepitaxial G
✍ G. Martínez-Criado; C.R. Miskys; A. Cros; A. Cantarero; O. Ambacher; M. Stutzman 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB 👁 1 views
Doping of Homoepitaxial GaN Layers
✍ P. Prystawko; M. Leszczynski; B. Beaumont; P. Gibart; E. Frayssinet; W. Knap; P. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 161 KB 👁 1 views
Exciton Diffusion in GaN Epitaxial Layer
✍ Yu. Rakovich ; J.F. Donegan; A. Gladyshchuk; G. Yablonskii; B. Schineller; M. He 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 78 KB 👁 1 views
Properties of Homoepitaxial and Heteroep
✍ Sánchez-García, M. A. ;Naranjo, F. B. ;Pau, J. L. ;Jiménez, A. ;Calleja, E. ;Muñ 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 302 KB 👁 1 views

This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic