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Doping of Homoepitaxial GaN Layers

✍ Scribed by P. Prystawko; M. Leszczynski; B. Beaumont; P. Gibart; E. Frayssinet; W. Knap; P. Wisniewski; M. Bockowski; T. Suski; S. Porowski


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
161 KB
Volume
210
Category
Article
ISSN
0370-1972

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Properties of Homoepitaxial and Heteroep
✍ SΓ‘nchez-GarcΓ­a, M. A. ;Naranjo, F. B. ;Pau, J. L. ;JimΓ©nez, A. ;Calleja, E. ;MuΓ± πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 302 KB πŸ‘ 1 views

This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic