Temporary Dynamics of Exciton-Polaritons in GaN Films
โ Scribed by G. Malpuech; A.V. Kavokin
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 202 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A.A. Toropov (a), S.V. Ivanov (a), J.P. Bergman (b), T. Paskova (b), P.O. Holtz (b), and B. Monemar (b)
By exciting resonantly a microcavity with a pulsed laser beam, we have observed the in-plane propagation of excitonic cavity polaritons on distances much greater than the wavelength. The initial in-plane wave vector is conserved during several tens of picoseconds showing it is a good quantum number
Radiative lifetime of periodically arranged luminescent rods in a waveguide structure is measured with an optical Kerr gate technique. The period of the structure was chosen to be around twice of the wavelength of the exciton luminescence. The rods are made of (C 6 H 5 C 2 H 4 NH 3 ) 2 PbI 4 , which
Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the