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Interfacial reactions of ultrahigh vacuum deposited ErSi multilayer thin films

✍ Scribed by C.H. Luo; L.J. Chen

Book ID
108418399
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
551 KB
Volume
113-114
Category
Article
ISSN
0169-4332

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Epitaxial ytterbium silicide thin ®lms were grown on (111)Si by ultrahigh vacuum deposition and subsequent thermal annealing. The epitaxial YbSi 22x thin ®lms consist of various kinds of defects such as vacancies, stacking faults, and pinholes. The vacancies were ordered so as to relax the compressi