Interfacial reactions of ultrahigh vacuu
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K.S. Chi; L.J. Chen
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Article
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2002
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Elsevier Science
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English
โ 577 KB
Epitaxial ytterbium silicide thin ยฎlms were grown on (111)Si by ultrahigh vacuum deposition and subsequent thermal annealing. The epitaxial YbSi 22x thin ยฎlms consist of various kinds of defects such as vacancies, stacking faults, and pinholes. The vacancies were ordered so as to relax the compressi