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Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering

โœ Scribed by X.Y. Qiu; K.C. Chan; P.F. Lee; X.W. Dong; J.Y. Dai


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
563 KB
Volume
86
Category
Article
ISSN
0167-9317

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The (Pb 0.90 La 0.10 )Ti 0.975 O 3 (PLT) thin films with different thicknesses of PbO x buffer layers were deposited on the Pt(111)/Ti/SiO 2 /Si(100) substrates by RF magnetron sputtering technique. The PbO x buffer layer leads to the (100) orientation of the PLT thin films. Effects of the PbO x thi