Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

✍ Scribed by Jiagang Wu; Dingquan Xiao; Jiliang Zhu; Jianguo Zhu; Junzhe Tan

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 944 KB
• Volume: 202
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.08.059

✦ Synopsis

The (Pb 0.90 La 0.10 )Ti 0.975 O 3 (PLT) thin films with different thicknesses of PbO x buffer layers were deposited on the Pt(111)/Ti/SiO 2 /Si(100) substrates by RF magnetron sputtering technique. The PbO x buffer layer leads to the (100) orientation of the PLT thin films. Effects of the PbO x thickness on the microstructure and electrical properties of the PLT thin films were investigated. The experimental results show that the PbO x thickness plays an important role on the orientation, phase purity, domain structure, and electrical properties of the PLT thin films. The PLT thin films with proper PbO x thickness possess highly (100) orientation, high phase purity, strong intensity of out of plane polarization, and good electrical properties. It is concluded that the PbO x thickness between PLT thin films and Pt coated Si substrate is very critical to obtain good electrical properties.